Semiconductor and Fabrication Patents

Patent 10 of 66USPTO #64/036,330

EdgeWATS Machine

Wavelength-Addressed Trigger System. Desktop molecular fabrication. 52 sources. Single passive dichroic combiner. Stage moves - turret never rotates. 25,000+ validated recipes.

Metric	WATS Machine	ASML EUV Lithography	Conventional CVD/ALD
Physical
Size	12 x 12 x 12 inches V1	10m x 5m x 3m	Room-scale multiple chambers
Weight	Desktop - under 50 lbs	180 tons	Hundreds to thousands of lbs
Cost	Lease - no $20B fab required	$350M machine + $20B+ fab	$1M-$50M per system
Installation	Plug in. Run a recipe.	40 containers, 13 months, cleanroom	Months - controlled environment
Capability
Critical Dimension	Sub-1nm via e-beam slot	~2nm minimum	~5-10nm typical
Materials	2D semis, graphene, diamond, perovskite, MOFs, biological - all in one run	Silicon only	One material per system
Recipe Library	25,000+ validated - target 1,000,000+	Fixed process - no recipes	Fixed per system
Location	Any building - any country - any climate	Seismically stable + ultra-pure water + military cleanroom	Controlled environment required

WATS wins by every measure.Desktop vs 180 tons. Sub-1nm vs 2nm. Any material vs silicon only. Any location vs $20B fab.

Patent 9 of 66USPTO #64/036,328

LPCS Wafer

Latent Pre-loaded Chemistry Stack Wafer. All fabrication chemistry volumetrically pre-loaded. Zero external chemical introduction after manufacture.

Metric	LPCS Wafer	Conventional Silicon Wafer	EUV Photomask
Chemistry	Full stack pre-loaded at manufacture - inside the wafer	Bare substrate - all chemistry external	Pattern only - no chemistry
External Chemical Steps	Zero after wafer manufacture	Dozens of external steps	Requires separate wafer + chemicals
Activation	Wavelength-specific photon triggers each layer independently	Temperature, plasma, reactive gas separately	UV exposure - no chemistry
Contamination Risk	Near zero - sealed chemistry inside	High - every external step risks contamination	N/A
Portability	Ships as passive wafer - activates only on WATS	Requires fab present	Requires lithography system

LPCS Wafer wins.All chemistry pre-loaded. Zero external chemical steps. Ships passive. Activates on WATS only.

Patent 14 of 66USPTO #64/060,215

EdgeMemory

MoS2 ferroelectric FET non-volatile memory. HZO gate dielectric. 2 nanosecond switching. Non-volatile. On-die. 2 petabytes.

Metric	EdgeMemory FeFET	Best NVMe SSD	DRAM DDR5	3D NAND Flash
Switching Speed	2 nanoseconds	~200,000 nanoseconds	~10ns - volatile	~100,000 nanoseconds
Non-Volatile	Yes - holds data forever without power	Yes	No - loses on power loss	Yes
Speed vs NVMe	100,000x faster	Baseline	20x faster but volatile	2x faster
Endurance	Unlimited - no wear mechanism	~3,000 write cycles	Unlimited - no write wear	~3,000 cycles
Integration	On-die with processor - zero cable	Separate M.2 component	Separate DIMM	Separate component

EdgeMemory wins.100,000x faster than NVMe. Non-volatile. On-die. No cable. No controller. No bottleneck.

Patent 16 of 66USPTO #64/060,415

EdgeModem EM-1

2D semiconductor monolithic RF transceiver. 5G NR Sub-6 + mmWave. WiFi 7. BT 5.4. GPS. Post-quantum encrypted baseband.

Metric	EdgeModem EM-1	Qualcomm Snapdragon X80	Intel 5G Modem
Substrate	MoS2 - zero silicon - WATS grown	Silicon TSMC 4nm	Silicon
Encryption	Post-quantum baseband - ML-KEM-1024 hardware enclave	Conventional - quantum vulnerable	Conventional
Integration	Monolithic single-die - all RF on MoS2	Multiple dies - silicon + GaAs	Multiple components
5G Bands	Sub-6 + mmWave full global coverage	Sub-6 + mmWave	Sub-6 only
WiFi	WiFi 7 - 46 Gbps theoretical	WiFi 7	WiFi 6E

EdgeModem wins.Post-quantum hardware encryption. MoS2 vs silicon. Monolithic vs multi-die. Quantum-proof today.

Patent 50 of 66USPTO #64/067,648

EdgeSemi

Floating freight vehicle. Ion vertical propulsion. WATS superconducting MHD horizontal. Multi-trailer. Zero road contact. Zero emissions.

Metric	EdgeSemi Freight	Diesel 18-Wheeler	Tesla Semi Electric
Road Contact	Zero - floats above surface	Full contact - 80,000 lb road load	Full contact
Road Damage	Zero	Major - primary cause of road deterioration	Major
Emissions	Zero - no combustion	Diesel exhaust - PM2.5, NOx, CO2	Zero operational
Range	EdgeBattery + EdgeSolar - indefinite	~1,500 miles per tank	~500 miles per charge
Moving Parts	Zero - ion + MHD propulsion	Thousands	Hundreds

EdgeSemi wins.Zero road contact. Zero road damage. Zero emissions. Zero moving parts. Indefinite range.

Patent 51 of 66USPTO #64/067,649

EdgeWave

Three-layer maritime wave energy degradation. Diaphene deflector vanes, bow cancellation field, ion stabilization.

Metric	EdgeWave	Ship Stabilizers	Fixed Platform Mooring
Wave Attenuation	Three layers - deflector + field cancellation + ion stabilization	Single - fin stabilizers or ballast	Static mooring - no attenuation
Moving Parts	Zero - field-based + passive vanes	Fin actuators - hydraulic	None - passive
Coverage	360 degrees - all wave directions	Roll axis primarily	None
Storm Performance	Active cancellation scales with wave energy	Passive - limited storm	Mooring strength limit

EdgeWave wins.Three-layer active cancellation. 360 degree. Scales with storm severity. Zero moving parts.

Patent 52 of 66USPTO #64/067,650

EdgeEDA

AI-native EDA platform. Replaces Synopsys and Cadence. Natural language input. WATS fabrication output.

Metric	EdgeEDA	Synopsys Design Compiler	Cadence Innovus
Input Method	Natural language - speak or type the design	Manual RTL Verilog code	Manual RTL Verilog code
Target	MoS2 2D semiconductor native	Silicon only	Silicon only
License Cost	Sovereign - no external dependency	$500K-$2M+ annual	$500K-$2M+ annual
Output	WATS recipe file - direct to fab	GDSII - requires external fab	GDSII - requires external fab
Silicon Dependency	Zero	100%	100%

EdgeEDA wins.Natural language input. MoS2 native. No $2M license. Outputs to WATS fabrication directly.

WATS Fabricationvs The Fab

WATS Fabrication
vs The Fab